[Wien] increase band gap with change RMT.
arash bouchani
a_bouchani at yahoo.com
Wed Jan 28 17:14:31 CET 2004
Dear all Wein2K Users
We work on electronic structure of InN (III-V group of semiconductors).In literatures there are some different experimental values for energy gap for it.
As follows:
1- Eg =0.7ev
2- Eg =1.8ev
In computational point of view people have got values like:
1-emprical pseudopotential calculation Eg = 2ev
2-first principles treatment in the local density approximation Eg = 1.3ev
3- ortogonalized linear-combination of atomic orbitals(OLCAO) Eg = 1.02ev
4- Linear muffintin-orbitals (LMTO) Eg = 0.26ev
5- full-potential linear muffin-tin orbital (FLMTO) Eg = -0.26ev
First of all we used LDA and GGA(96) approximations leading to:
1- Eg = 0.16 ev (for LDA)
2- Eg = 0.17ev (for GGA)
Which are far from experimental values for this reason I used Engle&Vosko approximation
for obtaining energy gap choosing 25 in {case.in0 file}.We obtain Eg = 0.29975ev (with RMT In=1.85 A and RMT N=1.75 A).
As the value of Eg show still there is a discussion for Eg value.
Would you kindly tell me which approximation is suitable for III-V compunds semiconductors specially InN?
As for as know changing the RMT values (whit no error ) in any run(by Engle&Vosko approximation) would not effect in Eg values.But I got several values for Eg by choosing different values for RMT as follow:
1- RMT In = 1.85 A
RMT N = 1.75 A , Eg = 0.29975ev
2-RMT In = 2 A
RMT N = 1.7 A , Eg = 0.33221ev
3-RMT In = 2.2 A
RMT N = 1.7 A , Eg = 0.32423ev
Can you please tell me why we have got different values of Eg for various RMT ?
thankyou -Arash bouchani.
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