[Wien] metal or semiconductor
Peter Blaha
pblaha at theochem.tuwien.ac.at
Wed Aug 7 20:38:45 CEST 2019
GGA+U affects only the position of the correlated electrons (3d band or
4f, ..), but not of the delocalized states (eg. Ni-4s band in NiO)
Therefore you cannot get the correct gap in NiO with GGA+U, because the
Ni-4s states limit the size of the gap, even when you split the d-band
by an enormous U.
mBJ also affects the Ni-4s states and shift it up, so that the gap is
correct.
On the other hand, for 4f systems, mBJ can be too "weak" to open a gap.
Since we do not know your compound, we cannot say anything concrete,
but: yes, there is a possibility that GGA+U still gives a metal while
mBJ gives a semiconductor.
Am 07.08.2019 um 19:39 schrieb Wien2k User:
> Dear Prof.Laurence Marks
> thank you very much for your reply
>
> my scientific reasoning is the following;
> i noticed that mbj and GGA+U give almost the same band topology except
> that mBJ caused a band shift that showed semiconductor behavior,
> i think that mBJ is better suited to describe band-gaps than GGA+U, i
> think the material is semiconductor
>
> I still have a confirmation or another explanation
>
> Le mer. 7 août 2019 à 19:30, Laurence Marks <laurence.marks at gmail.com
> <mailto:laurence.marks at gmail.com>> a écrit :
>
> A good question which nobody can answer for you. These questions are
> why we do science.
>
> _____
> Professor Laurence Marks
> "Research is to see what everybody else has seen, and to think what
> nobody else has thought", Albert Szent-Gyorgi
> www.numis.northwestern.edu <http://www.numis.northwestern.edu>
>
> On Wed, Aug 7, 2019, 18:22 Wien2k User <wien2k.user at gmail.com
> <mailto:wien2k.user at gmail.com>> wrote:
>
> Dear Wien2k users;
>
>
> after GGA+U+SOC calculation, I found that the studied material
> is a metal ( even for a large value of Ueff ) but when I redid
> another calculation with mBJ based on GGA+U+SOC
> {mbj(GGA+U+SOC)}, I found a semiconductor.
>
> Which of these two behaviors is the most correct?
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