<div dir="ltr"><div><div><div>Dear Prof. Tran,<br><br></div> Thank you very much !<br></div> All the best,<br></div> Luis<br><br></div><div class="gmail_extra"><br><div class="gmail_quote">2016-01-25 15:31 GMT-02:00 <span dir="ltr"><<a href="mailto:tran@theochem.tuwien.ac.at" target="_blank">tran@theochem.tuwien.ac.at</a>></span>:<br><blockquote class="gmail_quote" style="margin:0 0 0 .8ex;border-left:1px #ccc solid;padding-left:1ex">Since LDA does not require the derivatives of the electron density,<br>
maybe this leads to more stable and smoother SCF/optimization.<div class="HOEnZb"><div class="h5"><br>
<br>
On Mon, 25 Jan 2016, Luis Ogando wrote:<br>
<br>
<blockquote class="gmail_quote" style="margin:0 0 0 .8ex;border-left:1px #ccc solid;padding-left:1ex">
Dear Wien2k community,<br>
<br>
I am working with III-V semiconductors (bulks and some combinations/heterostructures of their different compounds).<br>
I have noticed that sometimes LDA is better than PBE for convergence in the structural optimizations (in other words, convergence is easier with LDA).<br>
I would like to know if there is a kind of "general tendency" for III-V semiconductors or it will depend on the atomic species (or anything else) ?<br>
All the best,<br>
Luis <br>
<br>
</blockquote>
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